EIGINLEIKAR
●NPN epitaxial silicon, planar design.
●Collector-emitter voltage VCE=40V.
●Collector current IC=0.2A.
●Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.
●In compliance with ER RoHS 2002/95/EC directives.
maq per Qat: mmbt3904, Kína, birgjar, framleiðendur, heildsölu, á lager
